All component comparisons
MOSFET vs BJT
MOSFET and BJT (NPN / PNP) compared — what each is better at, and which one the job actually calls for.
A BJT is current-driven: hold base current and it conducts, with a roughly fixed saturation drop that does not improve however big the device is. A MOSFET is voltage-driven: push charge into the gate and it then behaves like a resistor, so at high current it dissipates far less than a BJT ever can. BJTs keep their place on cost, at very low currents, and wherever generating a clean gate drive would be more trouble than it is worth.
What each one is
MOSFET
A voltage-controlled switch/amplifier. Used everywhere for switching power efficiently (motors, LEDs, power supplies). Tiny gate current controls big load current.
BJT (NPN / PNP)
A current-controlled switch and amplifier with three pins. A small base current controls a much larger collector current. The classic transistor.
Key specs
MOSFET
- Vds (drain-source voltage)(V)
- Max voltage it can block when off.
- Id (drain current)(A)
- Max continuous current it can carry.
- Rds(on)(mOhm)
- On-resistance - lower means less heat/loss when conducting.
- Vgs(th)(V)
- Gate threshold voltage. For 3.3/5V control, use a logic-level MOSFET.
BJT (NPN / PNP)
- Current gain (hFE/β)(-)
- Collector current ÷ base current; often 100-300.
- Collector current (Ic max)(A)
- Max continuous current through the device.
- VCEO(V)
- Max collector-emitter voltage before breakdown.
- Power dissipation(W)
- Max heat; needs a heatsink for power types.
- Transition frequency (fT)(MHz)
- Upper frequency limit for useful gain.
Types you will meet
MOSFET
- N-channel
- P-channel
- Enhancement mode
- Depletion mode
- Power MOSFET
- Logic-level (drives from 3.3/5V)
BJT (NPN / PNP)
- NPN (e.g. BC547, 2N2222, 2N3904)
- PNP (e.g. BC557, 2N3906)
- Darlington (huge gain)
- Power BJT (TIP/TO-220)
How to choose
MOSFET
1) N-ch for low-side switching. 2) Vds >= 2x supply. 3) Id >> load current. 4) Vgs(th) below your control voltage (use logic-level for MCUs). 5) Low Rds(on) for high current.
BJT (NPN / PNP)
Switching: pick Ic > load, VCEO > supply, and drive the base hard (base resistor for ~Ic/10). Amplifying: choose for gain and fT. Add a heatsink for power use.
How each one fails
MOSFET
Gate destroyed by static (ESD) or overvoltage; overheats if Rds(on) too high or no heatsink; shorts D-S when blown.
BJT (NPN / PNP)
Shorts C-E from overcurrent/overvoltage, or opens from overheating. Often fails shorted.
Full reference for each part
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